KTC3880S [BL Galaxy Electrical]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
KTC3880S
型号: KTC3880S
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管 光电二极管 放大器
文件: 总3页 (文件大小:161K)
中文:  中文翻译
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BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3880S  
FEATURES  
Pb  
Lead-free  
z
Small reverse transfer capacitance.  
z
Low noise figure.  
APPLICATIONS  
z
High frequency Low noise amplifier application.  
z
VHF band amplifier application.  
SOT-23  
ORDERING INFORMATION  
Type No.  
KTC3879  
Marking  
Package Code  
SOT-23  
RR/RO/RY  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
40  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
30  
V
4
V
Collector Current  
20  
mA  
mA  
mW  
Emitter Current  
IE  
-20  
150  
-55~150  
Collector Power Dissipation  
Junction and Storage Temperature  
PC  
Tj,Tstg  
Document number: BL/SSSTC111  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3880S  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN  
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
IC=100μA,IE=0  
40  
V
V
V
V(BR)CEO  
V(BR)EBO  
IC=100μA,IB=0  
IE=100μA,IC=0  
30  
4
ICBO  
IEBO  
hFE  
fT  
VCB=18V,IE=0  
VEB=4V,IC=0  
0.5  
μA  
μA  
Emitter cut-off current  
0.5  
DC current gain  
VCE=6V,IC=2mA  
VCE=6V, IC= 1mA  
40  
240  
Transition frequency  
300  
550  
2.5  
MHz  
dB  
VCC=6V,IE=1mA,  
f=100KHz  
Noise figure  
NF  
5.0  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
R
O
Y
40-80  
AQR  
70-140  
AQO  
100-240  
AQY  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Min  
E
Dim  
Max  
A
B
C
D
E
G
H
J
2.85  
2.95  
1.35  
K
B
1.25  
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
Document number: BL/SSSTC111  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3880S  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
KTC3880S  
3000/Tape&Reel  
Document number: BL/SSSTC111  
Rev.A  
www.galaxycn.com  
3

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